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1. product profile 1.1 general description npn silicon germanium rf transisto r for high speed, low noise applications in a plastic, 4-pin dual-emitter sot343f package. the bfu910f is suitable for small si gnal applications up to 20 ghz. 1.2 features and benefits ? low noise high gain microwave transistor ? minimum noise figure (nf min ) = 0.65 db at 12 ghz ? maximum stable gain 14.2 db at 12 ghz ? 90 ghz f t sige technology 1.3 applications ? k u band dbs low-noise blocks 1.4 quick reference data [1] t sp is the temperature at the solder point of the emitter lead. bfu910f npn wideband silicon germ anium rf transistor rev. 2 ? 16 january 2015 product data sheet table 1. quick reference data t amb =25 ? c unless otherwise specified symbol parameter conditions min typ max unit v ce collector-emitter voltage r be ? 1 m ? -2.03.0v i c collector current - 10 15 ma p tot total power dissipation t sp ? 90 ?c [1] -- 300mw h fe dc current gain i c =6ma; v ce = 2 v - 1900 - c cbs collector-base capacitance v cb =2v; f=1mhz - 35 - ff f t transition frequency i c =6ma; v ce =2v - 90 - ghz msg maximum stable gain i c =6ma; v ce =2v; f=12ghz -14.2- db nf min minimum noise figure i c =6ma; v ce =2v; f = 12 ghz; ? s = ? opt -0.65- db g ass associated gain i c =6ma; v ce =2v; f = 12 ghz; ? s = ? opt -13.0- db p l(1db) output power at 1 db gain compression i c =10ma; v ce =2v; f = 12 ghz; z s =z l =50 ? -2 - dbm
bfu910f all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2015. all rights reserved. product data sheet rev. 2 ? 16 january 2015 2 of 11 nxp semiconductors bfu910f npn wideband silicon germanium rf transistor 2. pinning information 3. ordering information 4. marking 5. design support table 2. discrete pinning pin description simplified outline graphic symbol 1emitter 2base 3emitter 4 collector pee table 3. ordering information type number package name description version bfu910f - plastic surface-mounted flat pack package; reverse pinning; 4 leads sot343f table 4. marking type number marking description bfu910f f1* * = t : made in malaysia * = w : made in china table 5. available design support download from the bfu910f product information page on http://www.nxp.com . support item available remarks device models for agilent eesof eda ads q1 2015 based on mextram device model. spice model q1 2015 based on gummel-poon device model. s-parameters yes noise parameters yes solder pattern yes application notes yes
bfu910f all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2015. all rights reserved. product data sheet rev. 2 ? 16 january 2015 3 of 11 nxp semiconductors bfu910f npn wideband silicon germanium rf transistor 6. limiting values 7. recommended operating conditions [1] t sp is the temperature at the solder point of the emitter lead. 8. thermal characteristics [1] t sp is the temperature at the solder point of the collector lead. t sp has the following relation to the ambient temperature t amb : t sp =t amb +p? r th(sp-amb) with p the power dissipation and r th(sp-amb) the thermal resistance between the solder point and ambient. r th(sp-amb) is determined by the heat transfer properties in the application. the heat transfer properties are set by the appl ication board materials, the board layout and the environment e.g. housing. [2] based on simulation. table 6. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v cb collector-base voltage open emitter - 9.5 v v ce collector-emitter voltage open base - 2.0 v shorted base - 9.5 v v eb emitter-base voltage open collector - 1.5 v t stg storage temperature ? 65 +150 ? c table 7. characteristics symbol parameter conditions min typ max unit v ce collector-emitter voltage r be ? 1 m ? -2.03.0v v eb emitter-base voltage open collector - - 1.0 v i c collector current - - 15 ma p i input power z s = 50 ? --0 dbm t j junction temperature ? 40 - +150 ?c p tot total power dissipation t sp ? 90 ?c [1] --300mw table 8. thermal characteristics symbol parameter conditions typ unit r th(j-sp) thermal resistance from junction to solder point [1] [2] 202 k/w
bfu910f all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2015. all rights reserved. product data sheet rev. 2 ? 16 january 2015 4 of 11 nxp semiconductors bfu910f npn wideband silicon germanium rf transistor 9. characteristics fig 1. power derating curve ddd 7 vs ?& 3 wrw wrw 3 wrw p: p: p: table 9. characteristics t amb =25 ? c unless otherwise specified symbol parameter conditions min typ max unit v (br)cbo collector-base breakdown voltage i c = 10 ? a; i e =0 ? a 9.5--v v (br)ceo collector-emitter breakdown voltage i c =10 ? a; i b =0 ? a 2.0--v i c collector current - 6 15 ma h fe dc current gain i c = 1.5 ma; v ce = 1.5 v 1200 2200 3300 i c =6ma; v ce = 2 v - 1900 - c ces collector-emitter capacitance v ce =2v; f=1mhz - 215 - ff c ebs emitter-base capacitance v eb =0.5v; f=1mhz - 300 - ff c cbs collector-base capacitance v cb = 2 v; f = 1 mhz - 35 - ff f t transition frequency i c =5ma; v ce =2v - 90 - ghz msg maximum stable gain f = 10.7 ghz; v ce =2v i c =6ma - 15.2 - db i c =10ma - 15.5 - db f = 12 ghz; v ce =2v i c =6ma - 14.2 - db i c =10ma - 14.5 - db f = 12.75 ghz; v ce =2v i c =6ma - 14.2 - db i c =10ma - 14.5 - db
bfu910f all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2015. all rights reserved. product data sheet rev. 2 ? 16 january 2015 5 of 11 nxp semiconductors bfu910f npn wideband silicon germanium rf transistor ?s 21 ? 2 insertion power gain f = 10.7 ghz; v ce =2v i c =6ma - 13.0 - db i c =10ma - 13.5 - db f = 12 ghz; v ce =2v i c =6ma - 12.0 - db i c =10ma - 12.5 - db f = 12.75 ghz; v ce =2v i c =6ma - 12.0 - db i c =10ma - 12.5 - db nf min minimum noise figure f = 10.7 ghz; v ce =2v; ? s = ? opt i c =6ma - 0.6 - db i c = 10 ma - 0.65 - db f = 12 ghz; v ce =2v; ? s = ? opt i c = 6 ma - 0.65 0.85 db i c = 10 ma - 0.7 - db f = 12.75 ghz; v ce =2v; ? s = ? opt i c =6ma - 0.65 - db i c = 10 ma - 0.7 - db g ass associated gain f = 10.7 ghz; v ce =2v; ? s = ? opt i c =6ma - 13.5 - db i c =10ma - 14.0 - db f = 12 ghz; v ce =2v; ? s = ? opt i c =6ma - 13.0 - db i c =10ma - 13.5 - db f = 12.75 ghz; v ce =2v; ? s = ? opt i c =6ma - 13.0 - db i c =10ma - 13.5 - db p l(1db) output power at 1 db gain compression f = 12 ghz; v ce =2v; z s =z l =50 ? ; i c =10ma -2-dbm ip3 o output third-order intercept point f 1 =12.000ghz; f 2 = 12.025 ghz; v ce =2v; z s =z l =50 ? ; i c =10ma -12.5-dbm table 9. characteristics ?continued t amb =25 ? c unless otherwise specified symbol parameter conditions min typ max unit
bfu910f all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2015. all rights reserved. product data sheet rev. 2 ? 16 january 2015 6 of 11 nxp semiconductors bfu910f npn wideband silicon germanium rf transistor 9.1 graphs f = 12 ghz; v ce = 2 v; t amb = 25 ? c. i c = 6 ma; v ce = 2 v; t amb = 25 ? c. fig 2. minimum noise figure and associated gain as function of collector current; typical values fig 3. minimum noise figure and associated gain as function of frequency; typical values v ce = 2 v; t amb = 25 ? c. (1) i c = 6 ma (2) i c = 10 ma v ce = 2 v; t amb = 25 ? c. fig 4. minimum noise figure as a function of frequency; typical values fig 5. dc current gain as a function of collector current; typical values ddd , & p$ 1) 1) plq plq 1) plq g% g% g% * dvv dvv * dvv g% g% g% 1) 1) plq plq 1) plq * dvv dvv * dvv ddd i*+] 1) 1) plq plq 1) plq g% g% g% * dvv dvv * dvv g% g% g% 1) 1) plq plq 1) plq * dvv dvv * dvv ddd i*+] 1) 1) plq plq 1) plq g% g% g% ddd , & p$ + )( )( + )(
bfu910f all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2015. all rights reserved. product data sheet rev. 2 ? 16 january 2015 7 of 11 nxp semiconductors bfu910f npn wideband silicon germanium rf transistor 10. package outline fig 6. package outline sot343f 5()(5(1&(6 287/,1( 9(56,21 (8523($1 352-(&7,21 ,668('$7( ,(& -('(& -(,7$ 627) 627) 81,7 $ pd[ pp e s ',0(16,216ppduhwkhruljlqdoglphqvlrqv 3odvwlfvxuidfhprxqwhgiodwsdfnsdfndjhuhyhuvhslqqlqjo hdgv e f ' ( h h + ( / s z \ p p vfdoh ghwdlo; / s f $ ( ; + ( ' $ \ e s e h h z$ 0 z$ 0
bfu910f all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2015. all rights reserved. product data sheet rev. 2 ? 16 january 2015 8 of 11 nxp semiconductors bfu910f npn wideband silicon germanium rf transistor 11. handling information 12. abbreviations 13. revision history caution this device is sensitive to electrostatic di scharge (esd). observe precautions for handling electrostatic sensitive devices. such precautions are described in the ansi/esd s20.20 , iec/st 61340-5 , jesd625-a or equivalent standards. table 10. abbreviations acronym description dbs direct broadcast satellite k u band k-under band npn negative-positive-negative sige silicon germanium table 11. revision history document id release date data sheet status change notice supersedes bfu910f v.2 20150116 product data sheet - bfu910f v.1 modifications ? the status of this document has been changed to ?product data sheet?. ? the title has been changed to ?npn wideband silicon germanium rf transistor?. ? section 1.1 on page 1 : the wording of this section has been changed. ? table 1 on page 1 : some changes have been made. ? table 6 on page 3 : the maximum value for v ce ,open base has been changed. ? table 7 on page 3 : the typical value for v ce has been changed. ? table 9 on page 4 : the conditions for v (br)cbo and v (br)ceo have been changed. ? figure 5 on page 6 : the figure has been added. bfu910f v.1 20141128 preliminary data sheet - -
bfu910f all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2015. all rights reserved. product data sheet rev. 2 ? 16 january 2015 9 of 11 nxp semiconductors bfu910f npn wideband silicon germanium rf transistor 14. legal information 14.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 14.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 14.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such info rmation. nxp semiconductors takes no responsibility for the content in this document if provided by an information source outside of nxp semiconductors. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors and its suppliers accept no liability for inclusion and/or use of nxp semiconducto rs products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
bfu910f all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2015. all rights reserved. product data sheet rev. 2 ? 16 january 2015 10 of 11 nxp semiconductors bfu910f npn wideband silicon germanium rf transistor export control ? this document as well as the item(s) described herein may be subject to export control regu lations. export might require a prior authorization from competent authorities. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comple te, exhaustive or legally binding. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. translations ? a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 14.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 15. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors bfu910f npn wideband silicon germanium rf transistor ? nxp b.v. 2015. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 16 january 2015 document identifier: bfu910f please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 16. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 design support . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 recommended operating conditions. . . . . . . . 3 8 thermal characteristics . . . . . . . . . . . . . . . . . . 3 9 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 9.1 graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 10 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 11 handling information. . . . . . . . . . . . . . . . . . . . . 8 12 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 13 revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 14 legal information. . . . . . . . . . . . . . . . . . . . . . . . 9 14.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9 14.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 14.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 14.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10 15 contact information. . . . . . . . . . . . . . . . . . . . . 10 16 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

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